onsemi NVTFWS1D9N04XM MOSFET

<p id="isPasted">The onsemi NVTFWS1D9N04XM MOSFET features low RDS(on) and capacitance within an AEC-Q101 qualified package. It supports a drain-to-source voltage of 40V and a continuous drain current of 141A, with a drain-to-source resistance of just 1.9mΩ at 10V. Encased in a compact µ8FL package measuring 3.3mm by 3.3mm, this MOSFET is well-suited for applications such as motor drives, battery protection circuits, and synchronous rectification.</p><h2>N-Channel MOSFET with Robust Electrical Characteristics </h2><p>The onsemi NVTFWS1D9N04XM MOSFET offers excellent performance with its low RDS(on) and capacitance, housed in an AEC-Q101-qualified package that ensures reliability in automotive and industrial environments. It offers a robust drain-to-source voltage and can handle a large continuous drain current, making it well-suited for high-power applications. With a very low drain-to-source resistance of 1.9mΩ at 10V, this device minimizes conduction losses, improving overall energy efficiency.</p><p>Its compact µ8FL package, measuring only 3.3mm by 3.3mm, allows for space-saving designs without compromising performance. This MOSFET is ideal for motor drive systems, battery protection circuits, and synchronous rectification applications, where efficient switching and reliable operation are critical. Its combination of high current capability, low resistance, and small footprint makes it a versatile component for demanding power management solutions.</p><h2>Flexible Specifications for Versatile Use Cases</h2><p>The onsemi MOSFET delivers robust performance with a 40V drain-to-source voltage rating, suitable for demanding power applications. It features an impressively low on-resistance of just 1.9mΩ at 10V, which minimizes conduction losses and enhances energy efficiency. Capable of handling a continuous drain current of 141A, this device supports high-current loads with reliability and stability. </p><p>These specifications make the MOSFET ideal for use in motor drives, battery protection circuits, and synchronous rectification, where efficient, high-capacity switching is crucial. Its combination of voltage, current, and low resistance characteristics ensures optimal performance in compact power management systems.</p><h2>Suited for Industrial Applications Demanding Minimal Losses</h2><p>The onsemi NVTFWS1D9N04XM MOSFET is highly beneficial for motor drive applications thanks to its low RDS(on) and high continuous drain current. It enables efficient power switching with minimal conduction losses. This efficiency is critical in motor drives, especially for brushless DC and synchronous motors, ensuring reliable high-current handling and enhanced system performance. Its impressive drain-to-source voltage rating supports the voltage demands typical of motor control circuits.</p><p>For battery protection, the MOSFET’s low on-resistance helps reduce power loss and heat generation during switching, enhancing the reliability and longevity of battery management systems. In synchronous rectification, its fast switching capability and low capacitance minimize losses during the conversion process, improving overall power efficiency in power supplies or DC-DC converters. The compact package allows integration in space-constrained environments, making this MOSFET ideal for these demanding applications</p>

onsemi NVTFWS1D9N04XM MOSFET Product Brief

Drain-to-source voltage

Rds (ON)

Continuous Drain to Source Current

Package Size

The onsemi NVTFWS1D9N04XM MOSFET features low RDS(on) and capacitance within an AEC-Q101 qualified package. It supports a drain-to-source voltage of 40V and a continuous drain current of 141A, with a drain-to-source resistance of just 1.9mΩ at 10V.